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Diodlar - Zener - Subay

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  • Diodlar - Zener - Subay
1SMA5953 R3G
Taiwan Semiconductor Corporation

1SMA5953 R3G

hissə-hissə: 172

Gərginlik - Zener (Nom) (Vz): 150V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 600 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 114V,

Arzu
1SMA5930HR3G
Taiwan Semiconductor Corporation

1SMA5930HR3G

hissə-hissə: 134

Gərginlik - Zener (Nom) (Vz): 16V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 12.2V,

Arzu
1SMA200Z R3G
Taiwan Semiconductor Corporation

1SMA200Z R3G

hissə-hissə: 126

Gərginlik - Zener (Nom) (Vz): 200V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 1500 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 152V,

Arzu
1N5224B A0G
Taiwan Semiconductor Corporation

1N5224B A0G

hissə-hissə: 175

Gərginlik - Zener (Nom) (Vz): 2.8V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 75µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1N4731G A0G
Taiwan Semiconductor Corporation

1N4731G A0G

hissə-hissə: 146

Gərginlik - Zener (Nom) (Vz): 4.3V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 9 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.2V @ 200mA,

Arzu
1N5226B A0G
Taiwan Semiconductor Corporation

1N5226B A0G

hissə-hissə: 158

Gərginlik - Zener (Nom) (Vz): 3.3V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 28 Ohms, Cari - Ters Sızma @ Vr: 25µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1SMA4748 R3G
Taiwan Semiconductor Corporation

1SMA4748 R3G

hissə-hissə: 193

Gərginlik - Zener (Nom) (Vz): 22V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 23 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 16.7V,

Arzu
1N4753G R1G
Taiwan Semiconductor Corporation

1N4753G R1G

hissə-hissə: 106

Gərginlik - Zener (Nom) (Vz): 36V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 50 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 27.4V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.2V @ 200mA,

Arzu
1SMB5928HR5G
Taiwan Semiconductor Corporation

1SMB5928HR5G

hissə-hissə: 128

Gərginlik - Zener (Nom) (Vz): 13V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 7 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 9.9V,

Arzu
1N5262B A0G
Taiwan Semiconductor Corporation

1N5262B A0G

hissə-hissə: 170

Gərginlik - Zener (Nom) (Vz): 51V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 125 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 39V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1SMA4745 R3G
Taiwan Semiconductor Corporation

1SMA4745 R3G

hissə-hissə: 180

Gərginlik - Zener (Nom) (Vz): 16V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 16 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 12.2V,

Arzu
1SMA4761 R3G
Taiwan Semiconductor Corporation

1SMA4761 R3G

hissə-hissə: 164

Gərginlik - Zener (Nom) (Vz): 75V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 175 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 56V,

Arzu
1SMB5942 R5G
Taiwan Semiconductor Corporation

1SMB5942 R5G

hissə-hissə: 195

Gərginlik - Zener (Nom) (Vz): 51V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 70 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 38.8V,

Arzu
1SMA5951 R3G
Taiwan Semiconductor Corporation

1SMA5951 R3G

hissə-hissə: 160

Gərginlik - Zener (Nom) (Vz): 120V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 360 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 91.2V,

Arzu
1SMB5951 R5G
Taiwan Semiconductor Corporation

1SMB5951 R5G

hissə-hissə: 136

Gərginlik - Zener (Nom) (Vz): 120V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 360 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 91.2V,

Arzu
1SMB5931 R5G
Taiwan Semiconductor Corporation

1SMB5931 R5G

hissə-hissə: 182

Gərginlik - Zener (Nom) (Vz): 18V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 12 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 13.7V,

Arzu
1SMB5954 R5G
Taiwan Semiconductor Corporation

1SMB5954 R5G

hissə-hissə: 112

Gərginlik - Zener (Nom) (Vz): 160V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 700 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 121.6V,

Arzu
1N5261B A0G
Taiwan Semiconductor Corporation

1N5261B A0G

hissə-hissə: 166

Gərginlik - Zener (Nom) (Vz): 47V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 105 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 36V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1PGSMB5949 R5G
Taiwan Semiconductor Corporation

1PGSMB5949 R5G

hissə-hissə: 132

Gərginlik - Zener (Nom) (Vz): 100V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 250 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 76V,

Arzu
1N5225B A0G
Taiwan Semiconductor Corporation

1N5225B A0G

hissə-hissə: 140

Gərginlik - Zener (Nom) (Vz): 3V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 29 Ohms, Cari - Ters Sızma @ Vr: 50µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1SMA4743HR3G
Taiwan Semiconductor Corporation

1SMA4743HR3G

hissə-hissə: 200

Gərginlik - Zener (Nom) (Vz): 13V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 9.9V,

Arzu
1SMA5927 M2G
Taiwan Semiconductor Corporation

1SMA5927 M2G

hissə-hissə: 187

Gərginlik - Zener (Nom) (Vz): 12V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 6.5 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 9.1V,

Arzu
1SMA130Z R3G
Taiwan Semiconductor Corporation

1SMA130Z R3G

hissə-hissə: 181

Gərginlik - Zener (Nom) (Vz): 130V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 700 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 98.8V,

Arzu
1N4756G A0G
Taiwan Semiconductor Corporation

1N4756G A0G

hissə-hissə: 121

Gərginlik - Zener (Nom) (Vz): 47V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 35.8V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.2V @ 200mA,

Arzu
1SMA4745HR3G
Taiwan Semiconductor Corporation

1SMA4745HR3G

hissə-hissə: 161

Gərginlik - Zener (Nom) (Vz): 16V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 16 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 12.2V,

Arzu
1N4758G A0G
Taiwan Semiconductor Corporation

1N4758G A0G

hissə-hissə: 157

Gərginlik - Zener (Nom) (Vz): 56V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 110 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 42.6V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.2V @ 200mA,

Arzu
1SMA160Z R3G
Taiwan Semiconductor Corporation

1SMA160Z R3G

hissə-hissə: 131

Gərginlik - Zener (Nom) (Vz): 160V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 1100 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 121.6V,

Arzu
1SMB5926HR5G
Taiwan Semiconductor Corporation

1SMB5926HR5G

hissə-hissə: 171

Gərginlik - Zener (Nom) (Vz): 11V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 5.5 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 8.4V,

Arzu
1N4751G A0G
Taiwan Semiconductor Corporation

1N4751G A0G

hissə-hissə: 147

Gərginlik - Zener (Nom) (Vz): 30V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 22.8V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.2V @ 200mA,

Arzu
1SMA5947HR3G
Taiwan Semiconductor Corporation

1SMA5947HR3G

hissə-hissə: 125

Gərginlik - Zener (Nom) (Vz): 82V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 160 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 62.2V,

Arzu
1SMB5937HR5G
Taiwan Semiconductor Corporation

1SMB5937HR5G

hissə-hissə: 123

Gərginlik - Zener (Nom) (Vz): 33V, Dözümlülük: ±5%, Güc - Maks: 3W, Empedans (Maks) (Zzt): 33 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 25.1V,

Arzu
1SMA4741 R3G
Taiwan Semiconductor Corporation

1SMA4741 R3G

hissə-hissə: 181

Gərginlik - Zener (Nom) (Vz): 11V, Dözümlülük: ±5%, Güc - Maks: 1.25W, Empedans (Maks) (Zzt): 8 Ohms, Cari - Ters Sızma @ Vr: 1µA @ 8.4V,

Arzu
1N5222B A0G
Taiwan Semiconductor Corporation

1N5222B A0G

hissə-hissə: 196

Gərginlik - Zener (Nom) (Vz): 2.5V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 100µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1SMA5930 R3G
Taiwan Semiconductor Corporation

1SMA5930 R3G

hissə-hissə: 193

Gərginlik - Zener (Nom) (Vz): 16V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 12.2V,

Arzu
1N5221B A0G
Taiwan Semiconductor Corporation

1N5221B A0G

hissə-hissə: 163

Gərginlik - Zener (Nom) (Vz): 2.4V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 100µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 1.1V @ 200mA,

Arzu
1SMA5956 R3G
Taiwan Semiconductor Corporation

1SMA5956 R3G

hissə-hissə: 135

Gərginlik - Zener (Nom) (Vz): 200V, Dözümlülük: ±5%, Güc - Maks: 1.5W, Empedans (Maks) (Zzt): 1200 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 152V,

Arzu