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Transistorlar - Bipolar (BJT) - Diziler, Önc&

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  • Transistorlar - Bipolar (BJT) - Diziler, Önc&
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage

RN4901(T5L,F,T)

hissə-hissə: 1552

Transistor növü: 1 NPN, 1 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 4.7 kOhms, Rezistor - Emitter Base (R2): 4.7 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Arzu
RN4902FE,LF(CT
Toshiba Semiconductor and Storage

RN4902FE,LF(CT

hissə-hissə: 196360

Transistor növü: 1 NPN, 1 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, Rezistor - Emitter Base (R2): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Arzu
RN1965(TE85L,F)
Toshiba Semiconductor and Storage

RN1965(TE85L,F)

hissə-hissə: 9983

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 2.2 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1963FE(TE85L,F)

hissə-hissə: 1435

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 22 kOhms, Rezistor - Emitter Base (R2): 22 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Arzu
RN1505(TE85L,F)
Toshiba Semiconductor and Storage

RN1505(TE85L,F)

hissə-hissə: 128512

Transistor növü: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 2.2 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu
RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2965FE(TE85L,F)

hissə-hissə: 1529

Transistor növü: 2 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 2.2 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu
RN1509(TE85L,F)
Toshiba Semiconductor and Storage

RN1509(TE85L,F)

hissə-hissə: 191088

Transistor növü: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 47 kOhms, Rezistor - Emitter Base (R2): 22 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Arzu
RN1973(TE85L,F)
Toshiba Semiconductor and Storage

RN1973(TE85L,F)

hissə-hissə: 116165

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Arzu
RN1702JE(TE85L,F)
Toshiba Semiconductor and Storage

RN1702JE(TE85L,F)

hissə-hissə: 122052

Transistor növü: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, Rezistor - Emitter Base (R2): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Arzu
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage

RN2911(T5L,F,T)

hissə-hissə: 1491

Transistor növü: 2 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Arzu
RN1908FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1908FE(TE85L,F)

hissə-hissə: 139044

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 22 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu
RN4902,LF(CT
Toshiba Semiconductor and Storage

RN4902,LF(CT

hissə-hissə: 115907

Transistor növü: 1 NPN, 1 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, Rezistor - Emitter Base (R2): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Arzu
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2906FE(TE85L,F)

hissə-hissə: 1387

Transistor növü: 2 PNP - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 4.7 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1962FE(TE85L,F)

hissə-hissə: 3220

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, Rezistor - Emitter Base (R2): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Arzu
RN1602(TE85L,F)
Toshiba Semiconductor and Storage

RN1602(TE85L,F)

hissə-hissə: 9979

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 10 kOhms, Rezistor - Emitter Base (R2): 10 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Arzu
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1964FE(TE85L,F)

hissə-hissə: 183026

Transistor növü: 2 NPN - Pre-Biased (Dual), Cari - Kollektor (Ic) (Maks): 100mA, Gərginlik - Kolleksiya Verən Arızası (Maksimum): 50V, Rezistor - Baza (R1): 47 kOhms, Rezistor - Emitter Base (R2): 47 kOhms, DC Cari Qazanc (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Arzu