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Diodlar - Zener - Subay

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  • Diodlar - Zener - Subay
UDZS6V2B RRG
Taiwan Semiconductor Corporation

UDZS6V2B RRG

hissə-hissə: 196

Gərginlik - Zener (Nom) (Vz): 6.2V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 2.7µA @ 3V,

Arzu
MTZJ16SC R0G
Taiwan Semiconductor Corporation

MTZJ16SC R0G

hissə-hissə: 169

Gərginlik - Zener (Nom) (Vz): 16.1V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 12V,

Arzu
ZM4740A L0G
Taiwan Semiconductor Corporation

ZM4740A L0G

hissə-hissə: 241

Gərginlik - Zener (Nom) (Vz): 10V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 7 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 7.6V,

Arzu
MMSZ5258B RHG
Taiwan Semiconductor Corporation

MMSZ5258B RHG

hissə-hissə: 181

Gərginlik - Zener (Nom) (Vz): 36V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 70 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 27V,

Arzu
MTZJ10SB R0G
Taiwan Semiconductor Corporation

MTZJ10SB R0G

hissə-hissə: 208

Gərginlik - Zener (Nom) (Vz): 9.66V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 7V,

Arzu
MTZJ9V1SA R0G
Taiwan Semiconductor Corporation

MTZJ9V1SA R0G

hissə-hissə: 174

Gərginlik - Zener (Nom) (Vz): 8.51V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 25 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 6V,

Arzu
MTZJ24SB R0G
Taiwan Semiconductor Corporation

MTZJ24SB R0G

hissə-hissə: 193

Gərginlik - Zener (Nom) (Vz): 23.19V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 35 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 19V,

Arzu
MTZJ7V5SA R0G
Taiwan Semiconductor Corporation

MTZJ7V5SA R0G

hissə-hissə: 158

Gərginlik - Zener (Nom) (Vz): 7.04V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 4V,

Arzu
UDZS30B RRG
Taiwan Semiconductor Corporation

UDZS30B RRG

hissə-hissə: 232

Gərginlik - Zener (Nom) (Vz): 30V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 45nA @ 23V,

Arzu
UDZS4V7B RRG
Taiwan Semiconductor Corporation

UDZS4V7B RRG

hissə-hissə: 258

Gərginlik - Zener (Nom) (Vz): 4.7V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 2.7µA @ 1V,

Arzu
ZM4744A L0G
Taiwan Semiconductor Corporation

ZM4744A L0G

hissə-hissə: 183

Gərginlik - Zener (Nom) (Vz): 15V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 14 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 11.4V,

Arzu
ZM4748A L0G
Taiwan Semiconductor Corporation

ZM4748A L0G

hissə-hissə: 154

Gərginlik - Zener (Nom) (Vz): 22V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 23 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 16.7V,

Arzu
MTZJ22SB R0G
Taiwan Semiconductor Corporation

MTZJ22SB R0G

hissə-hissə: 216

Gərginlik - Zener (Nom) (Vz): 21.18V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 17V,

Arzu
MMSZ5235B RHG
Taiwan Semiconductor Corporation

MMSZ5235B RHG

hissə-hissə: 236

Gərginlik - Zener (Nom) (Vz): 6.8V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 5 Ohms, Cari - Ters Sızma @ Vr: 3µA @ 5V,

Arzu
UDZS5V1B RRG
Taiwan Semiconductor Corporation

UDZS5V1B RRG

hissə-hissə: 200

Gərginlik - Zener (Nom) (Vz): 5.1V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 60 Ohms, Cari - Ters Sızma @ Vr: 1.8µA @ 2V,

Arzu
MMSZ5254B RHG
Taiwan Semiconductor Corporation

MMSZ5254B RHG

hissə-hissə: 257

Gərginlik - Zener (Nom) (Vz): 27V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 41 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 21V,

Arzu
MMSZ5261B RHG
Taiwan Semiconductor Corporation

MMSZ5261B RHG

hissə-hissə: 187

Gərginlik - Zener (Nom) (Vz): 47V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 105 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 36V,

Arzu
MTZJ12SA R0G
Taiwan Semiconductor Corporation

MTZJ12SA R0G

hissə-hissə: 179

Gərginlik - Zener (Nom) (Vz): 11.42V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 9V,

Arzu
ZM4756A L0G
Taiwan Semiconductor Corporation

ZM4756A L0G

hissə-hissə: 252

Gərginlik - Zener (Nom) (Vz): 47V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 35.8V,

Arzu
UDZS12B RRG
Taiwan Semiconductor Corporation

UDZS12B RRG

hissə-hissə: 251

Gərginlik - Zener (Nom) (Vz): 12V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 90nA @ 9V,

Arzu
MTZJ3V0SB R0G
Taiwan Semiconductor Corporation

MTZJ3V0SB R0G

hissə-hissə: 163

Gərginlik - Zener (Nom) (Vz): 3.12V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 120 Ohms, Cari - Ters Sızma @ Vr: 50µA @ 1V,

Arzu
MTZJ5V6SC R0G
Taiwan Semiconductor Corporation

MTZJ5V6SC R0G

hissə-hissə: 203

Gərginlik - Zener (Nom) (Vz): 5.76V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 60 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 2.5V,

Arzu
ZM4734A L0G
Taiwan Semiconductor Corporation

ZM4734A L0G

hissə-hissə: 238

Gərginlik - Zener (Nom) (Vz): 5.6V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 5 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 2V,

Arzu
MTZJ39SF R0G
Taiwan Semiconductor Corporation

MTZJ39SF R0G

hissə-hissə: 216

Gərginlik - Zener (Nom) (Vz): 39.13V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 85 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 30V,

Arzu
MTZJ4V3SC R0G
Taiwan Semiconductor Corporation

MTZJ4V3SC R0G

hissə-hissə: 248

Gərginlik - Zener (Nom) (Vz): 4.44V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V,

Arzu
MTZJ27SB R0G
Taiwan Semiconductor Corporation

MTZJ27SB R0G

hissə-hissə: 203

Gərginlik - Zener (Nom) (Vz): 25.62V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 45 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 21V,

Arzu
MTZJ39SA R0G
Taiwan Semiconductor Corporation

MTZJ39SA R0G

hissə-hissə: 206

Gərginlik - Zener (Nom) (Vz): 35.58V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 85 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 30V,

Arzu
MTZJ16SA R0G
Taiwan Semiconductor Corporation

MTZJ16SA R0G

hissə-hissə: 165

Gərginlik - Zener (Nom) (Vz): 15.19V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 12V,

Arzu
MTZJ8V2SB R0G
Taiwan Semiconductor Corporation

MTZJ8V2SB R0G

hissə-hissə: 175

Gərginlik - Zener (Nom) (Vz): 7.99V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 5V,

Arzu
MTZJ33SC R0G
Taiwan Semiconductor Corporation

MTZJ33SC R0G

hissə-hissə: 182

Gərginlik - Zener (Nom) (Vz): 31.7V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 65 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 25V,

Arzu
MTZJ3V6SB R0G
Taiwan Semiconductor Corporation

MTZJ3V6SB R0G

hissə-hissə: 176

Gərginlik - Zener (Nom) (Vz): 3.72V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 1V,

Arzu
MTZJ4V7SA R0G
Taiwan Semiconductor Corporation

MTZJ4V7SA R0G

hissə-hissə: 206

Gərginlik - Zener (Nom) (Vz): 4.56V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V,

Arzu
MTZJ18SC R0G
Taiwan Semiconductor Corporation

MTZJ18SC R0G

hissə-hissə: 183

Gərginlik - Zener (Nom) (Vz): 17.88V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 45 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 13V,

Arzu
MTZJ36SD R0G
Taiwan Semiconductor Corporation

MTZJ36SD R0G

hissə-hissə: 246

Gərginlik - Zener (Nom) (Vz): 34.89V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 75 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 27V,

Arzu
MMSZ5250B RHG
Taiwan Semiconductor Corporation

MMSZ5250B RHG

hissə-hissə: 181

Gərginlik - Zener (Nom) (Vz): 20V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 25 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 15V,

Arzu
TSZL52C3V0 RWG
Taiwan Semiconductor Corporation

TSZL52C3V0 RWG

hissə-hissə: 205

Gərginlik - Zener (Nom) (Vz): 3V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 95 Ohms, Cari - Ters Sızma @ Vr: 50µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu