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Diodlar - Zener - Subay

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  • Diodlar - Zener - Subay
MTZJ22SD R0G
Taiwan Semiconductor Corporation

MTZJ22SD R0G

hissə-hissə: 155

Gərginlik - Zener (Nom) (Vz): 22.08V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 17V,

Arzu
ZM4731A L0G
Taiwan Semiconductor Corporation

ZM4731A L0G

hissə-hissə: 214

Gərginlik - Zener (Nom) (Vz): 4.3V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 9 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 1V,

Arzu
MTZJ2V7SB R0G
Taiwan Semiconductor Corporation

MTZJ2V7SB R0G

hissə-hissə: 166

Gərginlik - Zener (Nom) (Vz): 2.8V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 110 Ohms, Cari - Ters Sızma @ Vr: 100µA @ 1V,

Arzu
MMSZ5251B RHG
Taiwan Semiconductor Corporation

MMSZ5251B RHG

hissə-hissə: 192

Gərginlik - Zener (Nom) (Vz): 22V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 29 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 17V,

Arzu
TSZL52C36 RWG
Taiwan Semiconductor Corporation

TSZL52C36 RWG

hissə-hissə: 223

Gərginlik - Zener (Nom) (Vz): 36V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 90 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 27V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ2V4SA R0G
Taiwan Semiconductor Corporation

MTZJ2V4SA R0G

hissə-hissə: 220

Gərginlik - Zener (Nom) (Vz): 2.43V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 120µA @ 1V,

Arzu
MTZJ3V9SA R0G
Taiwan Semiconductor Corporation

MTZJ3V9SA R0G

hissə-hissə: 204

Gərginlik - Zener (Nom) (Vz): 3.88V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V,

Arzu
TSZL52C16 RWG
Taiwan Semiconductor Corporation

TSZL52C16 RWG

hissə-hissə: 149

Gərginlik - Zener (Nom) (Vz): 16V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 12V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MMSZ5257B RHG
Taiwan Semiconductor Corporation

MMSZ5257B RHG

hissə-hissə: 261

Gərginlik - Zener (Nom) (Vz): 33V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 58 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 25V,

Arzu
ZM4737A L0G
Taiwan Semiconductor Corporation

ZM4737A L0G

hissə-hissə: 204

Gərginlik - Zener (Nom) (Vz): 7.5V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 4 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 5V,

Arzu
TSZL52C3V3 RWG
Taiwan Semiconductor Corporation

TSZL52C3V3 RWG

hissə-hissə: 195

Gərginlik - Zener (Nom) (Vz): 3.3V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 95 Ohms, Cari - Ters Sızma @ Vr: 25µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
UDZS7V5B RRG
Taiwan Semiconductor Corporation

UDZS7V5B RRG

hissə-hissə: 222

Gərginlik - Zener (Nom) (Vz): 7.5V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 900nA @ 4V,

Arzu
UDZS27B RRG
Taiwan Semiconductor Corporation

UDZS27B RRG

hissə-hissə: 180

Gərginlik - Zener (Nom) (Vz): 27V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 45nA @ 21V,

Arzu
TSZL52C39 RWG
Taiwan Semiconductor Corporation

TSZL52C39 RWG

hissə-hissə: 143

Gərginlik - Zener (Nom) (Vz): 39V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 90 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 29V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
UDZS5V6B RRG
Taiwan Semiconductor Corporation

UDZS5V6B RRG

hissə-hissə: 176

Gərginlik - Zener (Nom) (Vz): 5.6V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 900nA @ 3V,

Arzu
TSZL52C6V2 RWG
Taiwan Semiconductor Corporation

TSZL52C6V2 RWG

hissə-hissə: 142

Gərginlik - Zener (Nom) (Vz): 6.2V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 2V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
TSZL52C2V7 RWG
Taiwan Semiconductor Corporation

TSZL52C2V7 RWG

hissə-hissə: 186

Gərginlik - Zener (Nom) (Vz): 2.7V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 83 Ohms, Cari - Ters Sızma @ Vr: 75µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ22SA R0G
Taiwan Semiconductor Corporation

MTZJ22SA R0G

hissə-hissə: 222

Gərginlik - Zener (Nom) (Vz): 20.68V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 17V,

Arzu
MTZJ33SB R0G
Taiwan Semiconductor Corporation

MTZJ33SB R0G

hissə-hissə: 180

Gərginlik - Zener (Nom) (Vz): 31.1V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 65 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 25V,

Arzu
MTZJ27SA R0G
Taiwan Semiconductor Corporation

MTZJ27SA R0G

hissə-hissə: 166

Gərginlik - Zener (Nom) (Vz): 24.89V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 45 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 21V,

Arzu
MTZJ6V2SB R0G
Taiwan Semiconductor Corporation

MTZJ6V2SB R0G

hissə-hissə: 228

Gərginlik - Zener (Nom) (Vz): 6.12V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 60 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 3V,

Arzu
MTZJ36SA R0G
Taiwan Semiconductor Corporation

MTZJ36SA R0G

hissə-hissə: 185

Gərginlik - Zener (Nom) (Vz): 32.97V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 75 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 27V,

Arzu
MTZJ13SA R0G
Taiwan Semiconductor Corporation

MTZJ13SA R0G

hissə-hissə: 240

Gərginlik - Zener (Nom) (Vz): 12.43V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 35 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 10V,

Arzu
MMSZ5236B RHG
Taiwan Semiconductor Corporation

MMSZ5236B RHG

hissə-hissə: 177

Gərginlik - Zener (Nom) (Vz): 7.5V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 6 Ohms, Cari - Ters Sızma @ Vr: 3µA @ 6V,

Arzu
MTZJ30SD R0G
Taiwan Semiconductor Corporation

MTZJ30SD R0G

hissə-hissə: 185

Gərginlik - Zener (Nom) (Vz): 29.77V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 55 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 23V,

Arzu
MTZJ20SB R0G
Taiwan Semiconductor Corporation

MTZJ20SB R0G

hissə-hissə: 172

Gərginlik - Zener (Nom) (Vz): 19.11V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 55 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 15V,

Arzu
UDZS13B RRG
Taiwan Semiconductor Corporation

UDZS13B RRG

hissə-hissə: 209

Gərginlik - Zener (Nom) (Vz): 13V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 45nA @ 10V,

Arzu
MTZJ4V3SA R0G
Taiwan Semiconductor Corporation

MTZJ4V3SA R0G

hissə-hissə: 209

Gərginlik - Zener (Nom) (Vz): 4.17V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V,

Arzu
ZM4755A L0G
Taiwan Semiconductor Corporation

ZM4755A L0G

hissə-hissə: 175

Gərginlik - Zener (Nom) (Vz): 43V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 70 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 32.7V,

Arzu
MTZJ10SC R0G
Taiwan Semiconductor Corporation

MTZJ10SC R0G

hissə-hissə: 212

Gərginlik - Zener (Nom) (Vz): 9.95V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 7V,

Arzu
ZM4754A L0G
Taiwan Semiconductor Corporation

ZM4754A L0G

hissə-hissə: 236

Gərginlik - Zener (Nom) (Vz): 39V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 60 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 29.7V,

Arzu
TSZL52C18 RWG
Taiwan Semiconductor Corporation

TSZL52C18 RWG

hissə-hissə: 175

Gərginlik - Zener (Nom) (Vz): 18V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 50 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 14V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ51S R0G
Taiwan Semiconductor Corporation

MTZJ51S R0G

hissə-hissə: 231

Gərginlik - Zener (Nom) (Vz): 51V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 110 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 39V,

Arzu
MTZJ4V7SB R0G
Taiwan Semiconductor Corporation

MTZJ4V7SB R0G

hissə-hissə: 198

Gərginlik - Zener (Nom) (Vz): 4.68V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V,

Arzu
ZM4743A L0G
Taiwan Semiconductor Corporation

ZM4743A L0G

hissə-hissə: 158

Gərginlik - Zener (Nom) (Vz): 13V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 9.9V,

Arzu
ZM4753A L0G
Taiwan Semiconductor Corporation

ZM4753A L0G

hissə-hissə: 244

Gərginlik - Zener (Nom) (Vz): 36V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 50 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 27.4V,

Arzu