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Diodlar - Zener - Subay

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  • Diodlar - Zener - Subay
MTZJ5V1SB R0G
Taiwan Semiconductor Corporation

MTZJ5V1SB R0G

hissə-hissə: 244

Gərginlik - Zener (Nom) (Vz): 5.07V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1.5V,

Arzu
MTZJ2V2SA R0G
Taiwan Semiconductor Corporation

MTZJ2V2SA R0G

hissə-hissə: 158

Gərginlik - Zener (Nom) (Vz): 2.21V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 120µA @ 700mV,

Arzu
MTZJ7V5SB R0G
Taiwan Semiconductor Corporation

MTZJ7V5SB R0G

hissə-hissə: 213

Gərginlik - Zener (Nom) (Vz): 7.26V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 4V,

Arzu
MMSZ5227B RHG
Taiwan Semiconductor Corporation

MMSZ5227B RHG

hissə-hissə: 169

Gərginlik - Zener (Nom) (Vz): 3.6V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 24 Ohms, Cari - Ters Sızma @ Vr: 15µA @ 1V,

Arzu
MMSZ5237B RHG
Taiwan Semiconductor Corporation

MMSZ5237B RHG

hissə-hissə: 179

Gərginlik - Zener (Nom) (Vz): 8.2V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 8 Ohms, Cari - Ters Sızma @ Vr: 3µA @ 6.5V,

Arzu
ZM4729A L0G
Taiwan Semiconductor Corporation

ZM4729A L0G

hissə-hissə: 234

Gərginlik - Zener (Nom) (Vz): 3.6V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 10 Ohms, Cari - Ters Sızma @ Vr: 100µA @ 1V,

Arzu
TSZL52C33 RWG
Taiwan Semiconductor Corporation

TSZL52C33 RWG

hissə-hissə: 184

Gərginlik - Zener (Nom) (Vz): 33V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 25V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
TSZL52C20 RWG
Taiwan Semiconductor Corporation

TSZL52C20 RWG

hissə-hissə: 146

Gərginlik - Zener (Nom) (Vz): 20V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 50 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 15V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
ZM4758A L0G
Taiwan Semiconductor Corporation

ZM4758A L0G

hissə-hissə: 208

Gərginlik - Zener (Nom) (Vz): 56V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 110 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 42.6V,

Arzu
MTZJ7V5SC R0G
Taiwan Semiconductor Corporation

MTZJ7V5SC R0G

hissə-hissə: 244

Gərginlik - Zener (Nom) (Vz): 7.48V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 4V,

Arzu
ZM4742A L0G
Taiwan Semiconductor Corporation

ZM4742A L0G

hissə-hissə: 183

Gərginlik - Zener (Nom) (Vz): 12V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 9 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 9.1V,

Arzu
MTZJ36SB R0G
Taiwan Semiconductor Corporation

MTZJ36SB R0G

hissə-hissə: 196

Gərginlik - Zener (Nom) (Vz): 33.64V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 75 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 27V,

Arzu
MTZJ3V6SA R0G
Taiwan Semiconductor Corporation

MTZJ3V6SA R0G

hissə-hissə: 219

Gərginlik - Zener (Nom) (Vz): 3.58V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 1V,

Arzu
MMSZ5259B RHG
Taiwan Semiconductor Corporation

MMSZ5259B RHG

hissə-hissə: 241

Gərginlik - Zener (Nom) (Vz): 39V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 30V,

Arzu
MMSZ5256B RHG
Taiwan Semiconductor Corporation

MMSZ5256B RHG

hissə-hissə: 257

Gərginlik - Zener (Nom) (Vz): 30V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 49 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 23V,

Arzu
MTZJ2V7SA R0G
Taiwan Semiconductor Corporation

MTZJ2V7SA R0G

hissə-hissə: 248

Gərginlik - Zener (Nom) (Vz): 2.65V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 110 Ohms, Cari - Ters Sızma @ Vr: 100µA @ 1V,

Arzu
MTZJ15SA R0G
Taiwan Semiconductor Corporation

MTZJ15SA R0G

hissə-hissə: 227

Gərginlik - Zener (Nom) (Vz): 13.79V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 11V,

Arzu
TSZL52C24 RWG
Taiwan Semiconductor Corporation

TSZL52C24 RWG

hissə-hissə: 187

Gərginlik - Zener (Nom) (Vz): 24V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 18V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
UDZS3V9B RRG
Taiwan Semiconductor Corporation

UDZS3V9B RRG

hissə-hissə: 226

Gərginlik - Zener (Nom) (Vz): 3.9V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 90 Ohms, Cari - Ters Sızma @ Vr: 2.7µA @ 1V,

Arzu
TSZL52C3V6 RWG
Taiwan Semiconductor Corporation

TSZL52C3V6 RWG

hissə-hissə: 217

Gərginlik - Zener (Nom) (Vz): 3.6V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 95 Ohms, Cari - Ters Sızma @ Vr: 15µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ10SA R0G
Taiwan Semiconductor Corporation

MTZJ10SA R0G

hissə-hissə: 250

Gərginlik - Zener (Nom) (Vz): 9.36V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 30 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 7V,

Arzu
ZM4738A L0G
Taiwan Semiconductor Corporation

ZM4738A L0G

hissə-hissə: 219

Gərginlik - Zener (Nom) (Vz): 8.2V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 4.5 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 6V,

Arzu
TSZL52C5V6 RWG
Taiwan Semiconductor Corporation

TSZL52C5V6 RWG

hissə-hissə: 228

Gərginlik - Zener (Nom) (Vz): 5.6V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 40 Ohms, Cari - Ters Sızma @ Vr: 100nA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ6V8SB R0G
Taiwan Semiconductor Corporation

MTZJ6V8SB R0G

hissə-hissə: 233

Gərginlik - Zener (Nom) (Vz): 6.66V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 2µA @ 3.5V,

Arzu
ZM4732A L0G
Taiwan Semiconductor Corporation

ZM4732A L0G

hissə-hissə: 233

Gərginlik - Zener (Nom) (Vz): 4.7V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 8 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 1V,

Arzu
UDZS36B RRG
Taiwan Semiconductor Corporation

UDZS36B RRG

hissə-hissə: 254

Gərginlik - Zener (Nom) (Vz): 36V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 45nA @ 27V,

Arzu
TSZL52C4V3 RWG
Taiwan Semiconductor Corporation

TSZL52C4V3 RWG

hissə-hissə: 189

Gərginlik - Zener (Nom) (Vz): 4.3V, Dözümlülük: ±5%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 95 Ohms, Cari - Ters Sızma @ Vr: 5µA @ 1V, Gərginlik - İrəli (Vf) (Maks) @ If: 900mV @ 10mA,

Arzu
MTZJ13SB R0G
Taiwan Semiconductor Corporation

MTZJ13SB R0G

hissə-hissə: 193

Gərginlik - Zener (Nom) (Vz): 12.88V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 35 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 10V,

Arzu
UDZS22B RRG
Taiwan Semiconductor Corporation

UDZS22B RRG

hissə-hissə: 255

Gərginlik - Zener (Nom) (Vz): 22V, Dözümlülük: ±2%, Güc - Maks: 200mW, Empedans (Maks) (Zzt): 80 Ohms, Cari - Ters Sızma @ Vr: 45nA @ 17V,

Arzu
ZM4735A L0G
Taiwan Semiconductor Corporation

ZM4735A L0G

hissə-hissə: 164

Gərginlik - Zener (Nom) (Vz): 6.2V, Dözümlülük: ±5%, Güc - Maks: 1W, Empedans (Maks) (Zzt): 2 Ohms, Cari - Ters Sızma @ Vr: 10µA @ 3V,

Arzu
MTZJ8V2SA R0G
Taiwan Semiconductor Corporation

MTZJ8V2SA R0G

hissə-hissə: 251

Gərginlik - Zener (Nom) (Vz): 7.73V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 20 Ohms, Cari - Ters Sızma @ Vr: 500nA @ 5V,

Arzu
MTZJ27SC R0G
Taiwan Semiconductor Corporation

MTZJ27SC R0G

hissə-hissə: 173

Gərginlik - Zener (Nom) (Vz): 26.29V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 45 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 21V,

Arzu
MTZJ2V0SB R0G
Taiwan Semiconductor Corporation

MTZJ2V0SB R0G

hissə-hissə: 225

Gərginlik - Zener (Nom) (Vz): 2.11V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 100 Ohms, Cari - Ters Sızma @ Vr: 120µA @ 500mV,

Arzu
MTZJ39SE R0G
Taiwan Semiconductor Corporation

MTZJ39SE R0G

hissə-hissə: 214

Gərginlik - Zener (Nom) (Vz): 38.33V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 85 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 30V,

Arzu
MTZJ27SD R0G
Taiwan Semiconductor Corporation

MTZJ27SD R0G

hissə-hissə: 158

Gərginlik - Zener (Nom) (Vz): 26.97V, Dözümlülük: ±2%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 45 Ohms, Cari - Ters Sızma @ Vr: 200nA @ 21V,

Arzu
MMSZ5226B RHG
Taiwan Semiconductor Corporation

MMSZ5226B RHG

hissə-hissə: 208

Gərginlik - Zener (Nom) (Vz): 3.3V, Dözümlülük: ±5%, Güc - Maks: 500mW, Empedans (Maks) (Zzt): 28 Ohms, Cari - Ters Sızma @ Vr: 25µA @ 1V,

Arzu